Dr. Qing Zhu Materials Analysis Group, Philips Semiconductors
Research Associate, Physics Dept., Brookhaven National Lab. (1993-1996)
Ph.D., Materials Science & Eng., University of Pennsylvania.(1993)
M.S. Electrical Engineering and Physics, Syracuse University. (1989)
B.S. Physics, The East China Normal University. (1985)
Research and Industrial Experience:
At MAG, specialist in charge of non-destructive characterization techniques: x-ray diffraction (XRD), x-ray reflectivity (XRR), scanning acoustic microscopy (SAM) and realtime x-ray imaging (FEIN FOCUS). Expertise in thin-film and wafer analysis using diffraction techniques. Expertise in a wide range of interface characterization, IC packing and failure analysis using SAM and x-ray imaging.
Over ten years of research experience in materials characterization and quantification using synchrotron x-ray/neutron diffraction, x-ray reflectivity and spectroscopic analysis (XRF, XANES, XAFS, Raman, IR and UV-Vis). Extensive experience with electron microscopy (TEM, SEM, EDAX), and Rutherford backscattering spectrometry (RBS).
Strong background in IC processing and semiconductor physics. Extensive research works on nature of materials defect and structure-property interrelationship. Strong knowledge of statistical processes and techniques.
Extensive experience in thin-film deposition and processing using sputtering, PDV and CVD techniques. Investigate a wide variety of compound semiconductors, oxides, nitrides and polymer films. Extensive research experience in magnetic alloys, piezoelectric and ferroelectric perovskite oxides.